PART |
Description |
Maker |
MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模 Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
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IXYS[IXYS Corporation] IXYS, Corp.
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SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
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Sensitron Semiconductor http://
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IRKLF132 2213 IRKHF152-04HL IRKLF132-08HL IRKLF152 |
INT-A-pak Power Modules(可控二极H结构INT-A-pak功率模块) 相依甲柏功率模块(可控硅/二极结构相依甲柏功率模块 INT-A-pak Power Modules(可控可控L结构INT-A-pak功率模块) INT-A-pak Power Modules(可控二极管H结构INT-A-pak功率模块) From old datasheet system FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
|
International Rectifier, Corp.
|
VBO45-12NO7 VBO45-18NO7 VBO45-08NO7 VBO45-14NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
SK100DAL120D SK100DB120D |
NPN Power Darlington Modules NPN POWER DARLUNGTON MODULES 100A 1200V
|
Semikron International
|
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE TV 100C 100#22D SKT RECP Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MDD220-18N1 MDD220 MDD220-08N1 MDD220-12N1 MDD220- |
High Power Diode Modules Thyristor and Rectifiers Modules
|
IXYS[IXYS Corporation]
|
SKET33008D SKET33012E SKET33014E SKET33016E SKET33 |
SEMIPACK4 Thyristor Modules SEMIPACK? 4 Thyristor Modules SEMIPACK庐 4 Thyristor Modules SEMIPACK㈢ 4 Thyristor Modules
|
Semikron International
|
MID145-12A3 MII145-12A3 |
1200V IGBT module IGBT Modules: Boost Configurated IGBT Modules IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation IXYS, Corp.
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